Samsung Qualcomm Tool V6.4.05 Mega 💿

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Samsung Qualcomm Tool V6.4.05 Mega 💿

Samsung Qualcomm Tool V6.4.05 Mega

charge-traps are normally set at a voltage about 1v higher than regular cells, but there isnt much difference in performance between the two. they are better at hot bits, not so good at bits which are old and cold. but the charge trapping mechanism is not that simple, because the trapped charge will not normally remain trapped: so when you read the data, you have to read the cell twice. the bit is set, then you read the bit, then you set it again. so you start to lose information. it’s similar to a dram cell, where the charge leaks out over time.

samsung also added a scheme of ‘punch-down’, which is an optional way of addressing the bits. it works when you have a rather high voltage on the bit line, which means that you can make it really hot. for the s6, for instance, this might be a high 1.6v during testing with a clock of 1ghz, or something like that.

basically, the cells are addressed by a row and column. the row code says when the bit is an ‘1’ or a ‘0’. so, for instance, the row code could be 000000000010 and then the column code would be 000. there are eight bits on one cell, so you could have 00000000001000 which is 1, or 00000000001010 which is 0. this allows the cell to store two bits.

the punch-down allows you to reverse that and make that row code so it is the column address instead. so it says 000 instead of 000, and now the cell will store only one bit. so each cell can then store a word of data, and it has a flexible number of bits. and you can punch-down as many times as you need, which can be as many times as the nand can handle.

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